Porosity characteristics of ultra-low dielectric insulator films directly patterned by nano- imprint .lithography

Porosity characteristics of ultra-low dielectric insulator films directly patterned by nano- imprint .lithography

Author(s):

H. W. Ro ( NIST, USA )
R. L. Jones ( NIST, USA )
H. Peng ( Univ. of Michigan, USA )
H.-J. Lee ( NIST, USA )
E. K. Lin ( NIST, USA )

Publication title:

Emerging lithographic technologies XII

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

6921

Pub. Year:

2008

Vol.:

1

Page(from):

69211M-1

Page(to):

69211M-11

Pages:

11

Pub. info.:

Bellingham, Wash.: Society of Photo-optical Instrumentation Engineers

ISSN:

0277786X

ISBN:

9780819471062 [0819471062]

Language:

English

Call no.:

P63600/6921

Type:

Conference Proceedings

Details

TDL ID:	ZA00052552
Series ID:	PA00000029
Conf. info. (Name):	SPIE Advanced Lithography : Emerging Lithographic Technologies
Conf. info. (Number):	2008 : 12th
Conf. info. (Venue):	San Jose, California, USA
Conf. info. (Date):	2008.02.26-2008.02.28
Note for article:	Emerging lithographic technologies XII, San Jose, California, USA, 26-28 February 2008 - Session 11. Nanoimprint III (69211M/6921-85)

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