High-power InGaN LEDs: present status and future prospects

High-power InGaN LEDs: present status and future prospects

Author(s):

B. Hahn ( OSRAM Opto Semiconductors, Germany )
A. Weimar ( OSRAM Opto Semiconductors, Germany )
M. Peter ( OSRAM Opto Semiconductors, Germany )
J. Baur ( OSRAM Opto Semiconductors, Germany )

Publication title:

Light-emitting diodes : research, manufacturing, and applications XII : 22-24 January 2008, San Jose, California, USA

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

6910

Pub. Year:

2008

Page(from):

691004-1

Page(to):

691004-8

Pages:

8

Pub. info.:

Bellingham, Wash.: Society of Photo-optical Instrumentation Engineers

ISSN:

0277786X

ISBN:

9780819470850 [0819470856]

Language:

English

Call no.:

P63600/6910

Type:

Conference Proceedings

Details

TDL ID:	ZA00052541
Series ID:	PA00000029
Conf. info. (Name):	Photonics West - Optoelectronic Materials and Devices : Light-Emitting Diodes
Conf. info. (Number):	2008 : 12th
Conf. info. (Venue):	San Jose, California, USA
Conf. info. (Date):	2008.01.22-2008.01.24
Note for article:	Light-emitting diodes: Research, Manufacturing, and Applications XII, 22-24 January 2008, San Jose, California, USA - Session 1. LED Status Overview, Invited paper (691004/6910-03)

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