Increasing the efficiency of p+np+ injection-avalanche Si CMOS LEDs (450nm-750nm) by means of depletion layer profiling and reach-through techniques

Increasing the efficiency of p⁺np⁺ injection-avalanche Si CMOS LEDs (450nm-750nm) by means of depletion layer profiling and reach-through techniques

Author(s):

L. W. Snyman ( Tshwane Univ. of Technology, South Africa )
M. du Plessis ( Univ. of Pretoria, South Africa )

Publication title:

Silicon photonics III : 21-24 January 2008, San Jose, California, USA

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

6898

Pub. Year:

2008

Page(from):

68980E-1

Page(to):

68980E-12

Pages:

12

Pub. info.:

Bellingham, Wash.: Society of Photo-optical Instrumentation Engineers

ISSN:

0277786X

ISBN:

9780819470737 [0819470732]

Language:

English

Call no.:

P63600/6898

Type:

Conference Proceedings

Details

TDL ID:	ZA00052529
Series ID:	PA00000029
Conf. info. (Name):	Photonics West - Optoelectronic Materials and Devices : Silicon Photonics
Conf. info. (Number):	2008 : 3rd
Conf. info. (Venue):	San Jose, California, USA
Conf. info. (Date):	2008.01.21-2008.01.24
Note for article:	Silicon photonics III, 21-24 January 2008, San Jose, California, USA - Session 4. Emitters (68980E/6898-10)

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