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Reliability modeling of high voltage AlGaN/GaN and GaAs field-effect transistors

Author(s):
  • R. J. Trew ( North Carolina State Univ., USA )
  • Y. Liu ( North Carolina State Univ., USA )
  • W. Kuang ( North Carolina State Univ., USA )
  • G. L. Bilbro ( North Carolina State Univ., USA )
Publication title:
Gallium nitride materials and devices III : 21-24 January 2008, San Jose, California, USA
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
6894
Pub. Year:
2008
Page(from):
68941H-1
Page(to):
68941H-7
Pages:
7
Pub. info.:
Bellingham, Wash.: Society of Photo-optical Instrumentation Engineers
ISSN:
0277786X
ISBN:
9780819470690 [0819470694]
Language:
English
Call no.:
P63600/6894
Type:
Conference Proceedings

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