Investigation of cross-sectional potential distribution in GaN-based field effect transistors by Kelvin probe force microscopy

Investigation of cross-sectional potential distribution in GaN-based field effect transistors by Kelvin probe force microscopy

Author(s):

M. Kaneko ( Ritsumeikan Univ., Japan )
A. Hinoki ( Ritsumeikan Univ., Japan )
A. Suzuki ( Ritsumeikan Univ., Japan )
T. Araki ( Ritsumeikan Univ., Japan )
Y. Nanishi ( Ritsumeikan Univ., Japan )

Publication title:

Gallium nitride materials and devices III : 21-24 January 2008, San Jose, California, USA

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

6894

Pub. Year:

2008

Page(from):

689418-1

Page(to):

689418-9

Pages:

9

Pub. info.:

Bellingham, Wash.: Society of Photo-optical Instrumentation Engineers

ISSN:

0277786X

ISBN:

9780819470690 [0819470694]

Language:

English

Call no.:

P63600/6894

Type:

Conference Proceedings

Details

TDL ID:	ZA00052525
Series ID:	PA00000029
Conf. info. (Name):	Photonics West - Optoelectronic Materials and Devices : Gallium Nitride Materials and Devices
Conf. info. (Number):	2008 : 3rd
Conf. info. (Venue):	San Jose, California, USA
Conf. info. (Date):	2008.01.21-2008.01.24
Note for article:	Gallium nitride materials and devices III, 21-24 January 2008, San Jose, California, USA - Session 10. LEDs III (689418/6894-43)

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