Blank Cover Image

Lithography options for the 32nm half pitch node and their implications on resist and material technology

Author(s):
Publication title:
Quantum optics, optical data storage, and advanced microlithography : 12-14 November 2007, Beijing, China
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
6827
Pub. Year:
2008
Pt.:
C
Page(from):
68271V-1
Page(to):
68271V-10
Pages:
10
Pub. info.:
Bellingham, Wash.: Society of Photo-optical Instrumentation Engineers
ISSN:
0277786X
ISBN:
9780819470027 [0819470023]
Language:
English
Call no.:
P63600/6827
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings Evaluation of EUV resist materials for use at the 32 nm half-pitch node

T. Wallow, C. Higgins, R. Brainard, K. Petrillo, W. Montgomery

Society of Photo-optical Instrumentation Engineers
7 Conference Proceedings The study of EUVL mask defect inspection technology for 32-nm half-pitch node device and beyond

H. Shigemura, T. Amano, Y. Nishiyama, O. Suga, T. Terasawa

Society of Photo-optical Instrumentation Engineers
2 Conference Proceedings Double patterning design split implementation and validation for the 32nm node

M. Drapeau, V. Wiaux, E. Hendrickx, S. Verhaegen, T. Machida

SPIE - The International Society of Optical Engineering
8 Conference Proceedings Full field EUV lithography: lessons learned on EUV ADT imaging, EUV resist, and EUV reticles

E. Hendrickx, A. M. Goethals, A. Niroomand, R. Jonckheere, F. Van Roey

Society of Photo-optical Instrumentation Engineers
3 Conference Proceedings Status of ArF lithography for the 130-nm technology node

Ronse,K., Vandenberghe,G., Jaenen,P., Delvaux,C., Vangoidsenhoven,D., Roey,F.Van, Pollers,I., Maenhoudt,M., …

SPIE - The International Society for Optical Engineering
9 Conference Proceedings Extension of 193-nm immersion optical lithography to the 22-nm half-pitch node

Brueck, S.R.J., Biswas, A.M.

SPIE - The International Society of Optical Engineering
4 Conference Proceedings Manufacturability issues with double patterning for 50-nm half-pitch single damascene applications using RELACS shrink and corresponding OPC

M. O. de Beeck, J. Versluijs, V. Wiaux, T. Vandeweyer, I. Ciofi, H. Struyf, D. Hendrickx, J. V. Olmen

SPIE - The International Society of Optical Engineering
10 Conference Proceedings Optical extensions integration for a 0.314-μm2 45-nm node 6-transistor SRAM cell

Verhaegen, S., Nackaerts, A., Wiaux, V., Hendrickx, E., Vandenberghe, G.

SPIE - The International Society of Optical Engineering
5 Conference Proceedings Simulation of the 45-nm half-pitch node with 193-nm immersion lithography

Biswas, A.M., Frauenglass, A., Brueck, S.R.J.

SPIE - The International Society of Optical Engineering
11 Conference Proceedings Double dipole lithography for 65-nm node and beyond: a technology readiness review

Hsu, S.D., Eurlings, M., Hendrickx, E., Van Den Broeke, D.J., Chiou, T.-B., Chen, J.F., Laidig, T.L., Shi, X., Finders, …

SPIE - The International Society of Optical Engineering
6 Conference Proceedings 60nm half pitch contact layer printing: exploring the limits at 1.35NA lithography

J. Bekaert, E. Hendrickx, G. Vandenberghe

Society of Photo-optical Instrumentation Engineers
12 Conference Proceedings High-index immersion fluids enabling cost-effective single-exposure lithography for 32 nm half pitches

R. H. French, H. V. Tran, D. J. Adelman, N. S. Rogado, M. Kaku

Society of Photo-optical Instrumentation Engineers
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12