Ionizing radiation effects on CMOS imagers manufactured in deep submicron process

Ionizing radiation effects on CMOS imagers manufactured in deep submicron process

Author(s):

V. Goiffon ( Univ. de Toulouse, ISAE, France )
P. Magnan ( Univ. de Toulouse, ISAE, France )
F. Bernard ( CNES, France )
G. Rolland ( CNES, France )
O. Saint-Pé ( EADS Astrium, France )

Publication title:

Sensors, cameras, and systems for industrial/scientific applications IX : 29-31 January 2008, San Jose, California, USA

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

6816

Pub. Year:

2008

Page(from):

681607-1

Page(to):

681607-12

Pages:

12

Pub. info.:

Bellingham, Wash.: Society of Photo-optical Instrumentation Engineers

ISSN:

0277786X

ISBN:

9780819469885 [0819469882]

Language:

English

Call no.:

P63600/6816

Type:

Conference Proceedings

Details

TDL ID:	ZA00052447
Series ID:	PA00000029
Conf. info. (Name):	IS&T/SPIE Electronic Imaging : Sensors, Cameras, and Systems for Industrial/Scientific Applications
Conf. info. (Number):	2008 : 9th
Conf. info. (Venue):	San Jose, California, USA
Conf. info. (Date):	2008.01.29-2008.01.31
Note for article:	Sensors, cameras, and systems for industrial/scientific applications IX, 29-31 January 2008, San Jose, California, USA - Session 1. Sensors I (6816-06)

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