Wafer based mask characterization for double patterning lithography
- Author(s):
- R. de Kruif ( ASML Netherlands B.V., Netherlands )
- K. Bubke ( Advanced Mask Technology Ctr. GmbH & Co. KG, Germany )
- G.-J. Janssen ( ASML Netherlands B.V., Netherlands )
- E. van der Heijden ( ASML Netherlands B.V., Netherlands )
- J. Fochler ( Toppan Photomasks, Inc., Germany )
- Publication title:
- EMLC 2008 : 24th European Mask and Lithography Conference : 21-24 January 2008, Dresden, Germany
- Title of ser.:
- Proceedings of SPIE - the International Society for Optical Engineering
- Ser. no.:
- 6792
- Pub. Year:
- 2008
- Page(from):
- 679204-1
- Page(to):
- 679204-12
- Pages:
- 12
- Pub. info.:
- Bellingham, Wash.: Society of Photo-optical Instrumentation Engineers
- ISSN:
- 0277786X
- ISBN:
- 9780819469564 [0819469564]
- Language:
- English
- Call no.:
- P63600/6792
- Type:
- Conference Proceedings
Similar Items:
Society of Photo-optical Instrumentation Engineers |
7
Conference Proceedings
Alternating PSM balancing characterization: a comparative study using AIMS and wafer print data [6154-163]
SPIE - The International Society of Optical Engineering |
2
Conference Proceedings
Pitch doubling through dual-patterning lithography challenges in integration and litho budgets
SPIE - The International Society of Optical Engineering |
Society of Photo-optical Instrumentation Engineers |
3
Conference Proceedings
Coping with double-patterning/exposure lithography by EB mask writer EBM-6000
Society of Photo-optical Instrumentation Engineers |
SPIE - The International Society for Optical Engineering |
4
Conference Proceedings
Patterning 45nm flash/DRAM contact hole mask with hyper-NA immersion lithography and optimized illumination [6154-60]
SPIE - The International Society of Optical Engineering |
10
Conference Proceedings
Mask defect printing mechanisms for future lithography generations [6154-49]
SPIE - The International Society of Optical Engineering |
5
Conference Proceedings
Key improvement schemes of accuracies in EB mask writing for double patterning lithography
Society of Photo-optical Instrumentation Engineers |
11
Conference Proceedings
THE CHARACTERIZATION OF 0.1 pm LPD (LIGHT POINT DEFECT) PATTERNS IN MASS PRODUCTION OF SILICON WAFER WAFER
Electrochemical Society |
6
Conference Proceedings
Random 65nm..45nm C/H printing using optimized illumination source and CD sizing by post processing
Society of Photo-optical Instrumentation Engineers |
SPIE-The International Society for Optical Engineering |