The strain energy distribution of the capping layer surface for InAs/GaAs quantum dot along different growth directions

The strain energy distribution of the capping layer surface for InAs/GaAs quantum dot along different growth directions

Author(s):

Z. Yu ( Beijing Univ. of Posts and Telecommunications, China )
Y. Liu ( Beijing Univ. of Posts and Telecommunications, China )

Publication title:

Optoelectronic materials and devices II

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

6782

Pub. Year:

2007

Vol.:

2

Page(from):

67821X-1

Page(to):

67821X-9

Pages:

9

Pub. info.:

Bellingham, Wash.: Society of Photo-optical Instrumentation Engineers

ISSN:

0277786X

ISBN:

9780819469458 [0819469459]

Language:

English

Call no.:

P63600/6782

Type:

Conference Proceedings

Details

TDL ID:	ZA00052414
Series ID:	PA00000029
Conf. info. (Name):	Asia Communications and Photonics : Optoelectronic Materials and Devices
Conf. info. (Number):	2007 : 2nd
Conf. info. (Venue):	Wuhan, China
Conf. info. (Date):	2007.11.02-2007.11.05
Note for article:	Optoelectronic materials and devices II, 2-5 November 2007, Wuhan, China - Quantum Structure Devices (6782-71)

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