Repair specification study for half-pitch 32-nm patterns for EUVL

Repair specification study for half-pitch 32-nm patterns for EUVL

Author(s):

H. Aoyama ( MIRAI-Semiconductor Leading Edge Technologies, Inc., Japan )
T. Amano ( MIRAI-Semiconductor Leading Edge Technologies, Inc., Japan )
Y. Nishiyamo ( MIRAI-Semiconductor Leading Edge Technologies, Inc., Japan )
H. Shigemura ( MIRAI-Semiconductor Leading Edge Technologies, Inc., Japan )
O. Suga ( MIRAI-Semiconductor Leading Edge Technologies, Inc., Japan )

Publication title:

Photomask technology 2007

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

6730

Pub. Year:

2007

Vol.:

3

Page(from):

67305L-1

Page(to):

67305L-10

Pages:

10

Pub. info.:

Bellingham, Wash.: Society of Photo-optical Instrumentation Engineers

ISSN:

0277786X

ISBN:

9780819468871 [0819468878]

Language:

English

Call no.:

P63600/6730

Type:

Conference Proceedings

Details

TDL ID:	ZA00052371
Series ID:	PA00000029
Conf. info. (Name):	SPIE Photomask Technology : Photomask Technology 2007
Conf. info. (Number):	2007
Conf. info. (Venue):	Monterey, California, USA
Conf. info. (Date):	2007.09.18-2007.09.21
Note for article:	Photomask technology 2007, 18-21 September 2007, Monterey, California, USA - Poster session: EUV and other generation lithography (6730-206)

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