32nm half pitch node OPC process model development for three dimensional mask effects using rigorous simulation

32nm half pitch node OPC process model development for three dimensional mask effects using rigorous simulation

Author(s):

L. S. Melvin III ( Synopsys, Inc., USA )
T. Schmoeller ( Synopsys, Inc., Germany )
J. Li ( Synopsys, Inc., USA )

Publication title:

Photomask technology 2007

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

6730

Pub. Year:

2007

Vol.:

3

Page(from):

67304I-1

Page(to):

67304I-7

Pages:

7

Pub. info.:

Bellingham, Wash.: Society of Photo-optical Instrumentation Engineers

ISSN:

0277786X

ISBN:

9780819468871 [0819468878]

Language:

English

Call no.:

P63600/6730

Type:

Conference Proceedings

Details

TDL ID:	ZA00052371
Series ID:	PA00000029
Conf. info. (Name):	SPIE Photomask Technology : Photomask Technology 2007
Conf. info. (Number):	2007
Conf. info. (Venue):	Monterey, California, USA
Conf. info. (Date):	2007.09.18-2007.09.21
Note for article:	Photomask technology 2007, 18-21 September 2007, Monterey, California, USA - Poster session: Simulation (6730-161)

Similar Items:

1 Conference Proceedings Three dimensional mask effects in OPC process model development from first principles simulation L. S. Melvin Ill, T. Schmoeller, C. K. Kalus, J. Li Society of Photo-optical Instrumentation Engineers	7 Conference Proceedings Assist features for modeling three-dimensional mask effects in optical proximity correction Q. Yan, Z. Deng, J. Shiely, L. Melvin SPIE - The International Society of Optical Engineering
2 Conference Proceedings Extension of 193 nm dry lithography to 45-nm half-pitch node: double exposure and double processing technique [6349-62] Biswas, A. M., Li, J., Hiserote, J. A., Melvin III, L. S. SPIE - The International Society of Optical Engineering	8 Conference Proceedings Improvement of model kernel in process simulation by taking pattern correlation into account J. Li, Q. Yan, L. S. Melvin III SPIE - The International Society of Optical Engineering
3 Conference Proceedings OPC verification on cell level using fully rigorous mask topography simulation V. Domnenko, T. Klimpel, G. Viehoever, H. Koop, L. S. Melvin III Society of Photo-optical Instrumentation Engineers	9 Conference Proceedings Maintaining lithographic quality during OPC for low-k1 and MEEF processes constrained by mask dimensional rules Cork, C. M., Melvin III, L. S., Milier, M., Lugg, R. M., Rieger, M. L. SPIE - The International Society of Optical Engineering
4 Conference Proceedings Process window and interlayer aware OPC for the 32-nm node M. Terry, G. Zhang, G. Lu, S. Chang, T. Aton, R. Soper, M. Mason, S. Best, B. Dostalik, S. Hunsche, J. W. Li, R. Zhou, … SPIE - The International Society of Optical Engineering	10 Conference Proceedings The study of EUVL mask defect inspection technology for 32-nm half-pitch node device and beyond H. Shigemura, T. Amano, Y. Nishiyama, O. Suga, T. Terasawa Society of Photo-optical Instrumentation Engineers
5 Conference Proceedings Evaluation of EUV resist materials for use at the 32 nm half-pitch node T. Wallow, C. Higgins, R. Brainard, K. Petrillo, W. Montgomery Society of Photo-optical Instrumentation Engineers	11 Conference Proceedings Simulation of the 45-nm half-pitch node with 193-nm immersion lithography Biswas, A.M., Frauenglass, A., Brueck, S.R.J. SPIE - The International Society of Optical Engineering
6 Conference Proceedings Advanced mask process modeling for 45-nm and 32-nm nodes E. Tejnil, Y. Hu, E. Sahouria, S. Schulze, M. J. Tian Society of Photo-optical Instrumentation Engineers	12 Conference Proceedings Three-dimensional mask effect approximate modeling for sub-50-nm node device OPC S. Suh, S. Lee, K. Back, Y. Kim, S. Kim, Y. Chun SPIE - The International Society of Optical Engineering

1

2

3

4

5

6

7

8

9

10

11

12