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Manufacturing and photoelectrical properties of P-doped a-Si:H thin films deposited by PECVD

Author(s):
  • N. Liao ( Univ. of Electronic Science and Technology of China, China )
  • W. Li ( Univ. of Electronic Science and Technology of China, China )
  • Y. Jiang ( Univ. of Electronic Science and Technology of China, China )
  • Y. Kuang ( Univ. of Electronic Science and Technology of China, China )
  • K. Qi ( Univ. of Electronic Science and Technology of China, China )
Publication title:
Advanced optical manufacturing technologies
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
6722
Pub. Year:
2007
Vol.:
1
Page(from):
672219-1
Page(to):
672219-6
Pages:
6
Pub. info.:
Bellingham, Wash.: Society of Photo-optical Instrumentation Engineers
ISSN:
0277786X
ISBN:
9780819468796 [0819468797]
Language:
English
Call no.:
P63600/6722
Type:
Conference Proceedings

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