Room temperature GaN-GaAs direct bonding by argon-beam surface activation

Room temperature GaN-GaAs direct bonding by argon-beam surface activation

Author(s):

E. Higurashi ( The Univ. of Tokyo, Japan )
Y. Tokuda ( The Univ. of Tokyo, Japan )
M. Akaike ( The Univ. of Tokyo, Japan )
T. Suga ( The Univ. of Tokyo, Japan )

Publication title:

Optomechatronic micro/nano devices and components III : 8-10 October 2007, Lausanne, Switzerland

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

6717

Pub. Year:

2007

Page(from):

67170L-1

Page(to):

67170L-8

Pages:

8

Pub. info.:

Bellingham, Wash.: Society of Photo-optical Instrumentation Engineers

ISSN:

0277786X

ISBN:

9780819468659 [0819468657]

Language:

English

Call no.:

P63600/6717

Type:

Conference Proceedings

Details

TDL ID:	ZA00052363
Series ID:	PA00000029
Conf. info. (Name):	Optomechatronic Technologies : Optomechatronic Micro/Nano Devices and Components
Conf. info. (Number):	2007 : 3rd
Conf. info. (Venue):	Lausanne, Switzerland
Conf. info. (Date):	2007.10.08-2007.10.10
Note for article:	Optomechatronic micro/nano devices and components III, 8-10 October 2007, Lausanne, Switzerland - Session 2. Manupilation and assembly of micro/nano devices and components (6717-34)

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