GaSe and GaTe anisotropic layered semiconductors for radiation detectors

GaSe and GaTe anisotropic layered semiconductors for radiation detectors

Author(s):

K. C. Mandal ( EIC Labs., Inc. (USA) )
M. Choi ( EIC Labs., Inc. (USA) )
S. H. Kang ( EIC Labs., Inc. (USA) )
R. D. Rauh ( EIC Labs., Inc. (USA) )
J. Wei ( Stony Brook Univ. (USA) )

Publication title:

Hard X-ray and gamma-ray detector physics IX : 27-29 August 2007, San Diego, California

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

6706

Pub. Year:

2007

Page(from):

67060E-1

Page(to):

67060E-10

Pages:

10

Pub. info.:

Bellingham, Wash.: Society of Photo-optical Instrumentation Engineers

ISSN:

0277786X

ISBN:

9780819468543 [0819468541]

Language:

English

Call no.:

P63600/6706

Type:

Conference Proceedings

Details

TDL ID:	ZA00052352
Series ID:	PA00000029
Conf. info. (Name):	SPIE Optical Engineering and Applications : Hard X-Ray and Gamma-Ray Detector Physics
Conf. info. (Number):	2007 : 9th
Conf. info. (Venue):	San Diego, California, USA
Conf. info. (Date):	2007.08.27-2007.08.29
Note for article:	Hard X-Ray and Gamma-Ray Detector Physics IX, August 27-29, 2007, San Diego, CA, USA - Session 4. Other Materials I (6706-13)

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