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High performance organic field-effect transistors using high-K dielectrics grown by atomic layer deposition (ALD)

Author(s):
  • X.-H. Zhang ( Georgia Institute of Technology (USA) )
  • B. Domercq ( Georgia Institute of Technology (USA) )
  • X. Wang ( Georgia Institute of Technology (USA) )
  • S. Yoo ( Georgia Institute of Technology (USA) )
  • T. Kondo ( Georgia Institute of Technology (USA) )
Publication title:
Organic field-effect transistors VI : 26-28 August 2007, San Diego, California, USA
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
6658
Pub. Year:
2007
Page(from):
66580T-1
Page(to):
66580T-9
Pages:
9
Pub. info.:
Bellingham, Wash.: Society of Photo-optical Instrumentation Engineers
ISSN:
0277786X
ISBN:
9780819468062 [0819468061]
Language:
English
Call no.:
P63600/6658
Type:
Conference Proceedings

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