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Low-damage wet chemical etching for GaN-based visible-blind p-i-n detector

Author(s):
  • J. Chen ( Shanghai Institute of Technical Physics (China) )
  • J. Xu ( Shanghai Institute of Technical Physics (China) )
  • L. Wang ( Shanghai Institute of Technical Physics (China) )
  • X. Li ( Shanghai Institute of Technical Physics (China) )
  • Y. Zhang ( Shanghai Institute of Technical Physics (China) )
Publication title:
International Symposium on Photoelectronic Detection and Imaging 2007, photoelectronic imaging and detection : 9-12 September 2007, Beijing China
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
6621
Pub. Year:
2008
Page(from):
66211D-1
Page(to):
66211D-10
Pages:
10
Pub. info.:
Bellingham, Wash.: Society of Photo-optical Instrumentation Engineers
ISSN:
0277786X
ISBN:
9780819467638 [0819467634]
Language:
English
Call no.:
P63600/6621
Type:
Conference Proceedings

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