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Recombination lifetime characterization and mapping of p-i-n InP/Ln0.53Ga0.47As/InP mesa structure using the microwave photoconductivity decay (µ-PCD) technique

Author(s):
  • X. Wu ( Shanghai Institute of Technical Physics (China) )
  • K. Zhang ( Shanghai Institute of Technical Physics (China) )
  • Y. Huang ( Shanghai Institute of Technical Physics (China) )
  • H. Tang ( Shanghai Institute of Technical Physics (China) )
  • B. Han ( Shanghai Institute of Technical Physics (China) )
Publication title:
International Symposium on Photoelectronic Detection and Imaging 2007
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
6621
Pub. Year:
2008
Page(from):
66211C-1
Page(to):
66211C-6
Pages:
6
Pub. info.:
Bellingham, Wash.: Society of Photo-optical Instrumentation Engineers
ISSN:
0277786X
ISBN:
9780819467638 [0819467634]
Language:
English
Call no.:
P63600/6621
Type:
Conference Proceedings

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