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Highly Reliable Passivation Layer for a-InGaZnO Thin-film Transistors Fabricated Using Polysilsesquioxane

Author(s):
Publication title:
Oxide semiconductors : symposium held December 1-6, 2013, Boston, Massachusetts, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
1633
Pub. date:
2014
Page(from):
139
Page(to):
144
Pages:
6
Pub. info.:
Warrendale, Pa: Materials Research Society
ISSN:
02729172
ISBN:
9781605116105 [1605116106]
Language:
English
Call no.:
M23500/1633
Type:
Conference Proceedings

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