Defect Densities and Carrier Lifetimes in Oxygen Doped Nanocrystalline Si

Defect Densities and Carrier Lifetimes in Oxygen Doped Nanocrystalline Si

Author(s):

Shantan Kajjam ( Iowa State University, Ames, IA, USA )
Siva Konduri
Max Noack
G. Shamshimov ( Nazarbayev University, Astana, Kazakhstan )
N. Ussembayev

Publication title:

Film silicon science and technology : symposium held April 1-5, 2013, San Francisco, California U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

1536

Pub. Year:

2013

Page(from):

169

Page(to):

173

Pages:

5

Pub. info.:

Warrendale, Pa: Materials Research Society

ISSN:

02729172

ISBN:

9781605115139 [1605115134]

Language:

English

Call no.:

M23500/1536

Type:

Conference Proceedings

Details

TDL ID:	ZA00052290
Series ID:	PA00000011
Conf. info. (Name):	Film Silicon Science and Technology
Conf. info. (Number):	2013
Conf. info. (Venue):	San Francisco, California U.S.A.
Conf. info. (Date):	2013.04.01-2013.04.05
Note for article:	2013 MRS Spring Meeting, Symposium A, April 1-5, 2013, San Francisco, California, USA ; Defects and transport

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