Higher efficiency silicon CMOS light-emitting devices (450nm - 750nm) using current density and carrier injection techniques [5730-08]

Higher efficiency silicon CMOS light-emitting devices (450nm - 750nm) using current density and carrier injection techniques [5730-08]

Author(s):

L. W. Snyman ( Tshwane Univ. of Technology (South Africa) )
M. du Plessis ( Carl and Emily Fuchs Institute for Microelectronics, Univ. of Pretoria (South Africa) )
H. Aharoni ( Carl and Emily Fuchs Institute for Microelectronics, Univ. of Pretoria (South Africa) )

Publication title:

Optoelectronic Integration on Silicon II

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

5730

Pub. Year:

2005

Page(from):

59

Page(to):

72

Pages:

14

Pub. info.:

Bellingham, WA: SPIE

ISSN:

0277786X

ISBN:

9780819457042 [0819457043]

Language:

English

Call no.:

P63600/5730

Type:

Conference Proceedings

Details

TDL ID:	ZA00051908
Series ID:	PA00000029
Conf. info. (Name):	Photonics West - Optoelectronic Materials and Devices : Optoelectronic integration on silicon
Conf. info. (Number):	2005 : 2nd
Conf. info. (Venue):	San Jose, CA
Conf. info. (Date):	2005.01.25-2005.01.26

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