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GaN HEMT Reliability: From Time Dependent Gate Degradation to On-state Failure Mechanisms

Author(s):
Publication title:
Reliability and materials issues of III-V and II-VI semiconductor optical and electron devices and materials II : symposium held April 9-13, 2012, San Francisco, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
1432
Pub. date:
2012
Vol.:
1432
Page(from):
119
Page(to):
130
Pages:
12
Pub. info.:
Warrendale, PA: Materials Research Society
ISSN:
02729172
ISBN:
9781605114095 [160511409X]
Language:
English
Call no.:
M23500/1432
Type:
Conference Proceedings

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