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The Effects of Device Dimension, Substrate Temperature, and Gate Metallization on the Reliability of AlGaN/GaN High Electron Mobility Transistors

Author(s):
F. Ren
S.J. Pearton
Lu Liu
T.-S. Kang
E.A. Douglas
C.Y. Chang
C.-F. Lo
D.A. Cullen
L. Zhou
D.J. Smith
5 more
Publication title:
Compound semiconductors for generating, emitting, and manipulating energy : symposium held November 28-December 2, 2011, Boston, Massachusetts, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
1396
Pub. date:
2012
Vol.:
1396
Page(from):
115
Page(to):
126
Pages:
12
Pub. info.:
Warrendale, PA: Materials Research Society
ISSN:
02729172
ISBN:
9781605113739 [1605113735]
Language:
English
Call no.:
M23500/1396
Type:
Conference Proceedings

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