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Influence of Process Parameters on Resistive Switching in MOCVD NiO Films

Author(s):
X.P. Wang
D.J. Wouters
M. Toeller
J. Meersschaut
L. Goux
Y.Y. Chen
B. Govoreanu
L. Pantisano
R. Degraeve
M. Jurczak
L. Altimime
J. Kittl
7 more
Publication title:
New functional materials and emerging device architectures for nonvolatile memories : symposium held April 25-29, 2011, San Francisco, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
1337
Pub. Year:
2011
Page(from):
61
Page(to):
66
Pages:
6
Pub. info.:
Warrendale, PA: Materials Research Society
ISSN:
02729172
ISBN:
9781605113142 [160511314X]
Language:
English
Call no.:
M23500/1337
Type:
Conference Proceedings

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