Indium Gallium Nitride on Germanium by Molecular Beam Epitaxy

Indium Gallium Nitride on Germanium by Molecular Beam Epitaxy

Author(s):

Publication title:

Compound semiconductors for energy applications and environmental sustainability--2011 : symposium held April 25-29, 2011, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

1324

Pub. Year:

2012

Page(from):

3

Page(to):

8

Pages:

6

Pub. info.:

Warrendale, PA: Materials Research Society

ISSN:

02729172

ISBN:

9781605113012 [1605113018]

Language:

English

Call no.:

M23500/1324

Type:

Conference Proceedings

Details

TDL ID:	ZA00051867
Series ID:	PA00000011
Conf. info. (Name):	2011 MRS Spring Meeting ; Symposium D, Compound Semiconductors for Energy Applications and Environmental Sustainability
Conf. info. (Number):	2011
Conf. info. (Venue):	San Francisco, CA
Conf. info. (Date):	2011.04.25-2011.04.29

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