Seed Layer Free Ruthenium Precursor for MOCVD
- Author(s):
- Publication title:
- Physicas and technology of high-k gate dielectrics : proceedings of the International Symposium on High Dielectric Constant Materials : Materials Science, Processing, and Reliability, and Manufacturing Issues
- Title of ser.:
- Electrochemical Society Proceedings Series
- Ser. no.:
- 2002-28
- Pub. Year:
- 2002
- Page(from):
- 277
- Page(to):
- 286
- Pages:
- 10
- Pub. info.:
- Pennington, NJ: Electrochemical Society
- ISSN:
- 01616374
- ISBN:
- 9781566773959 [1566773954]
- Language:
- English
- Call no.:
- E23400/200228
- Type:
- Conference Proceedings
Similar Items:
Materials Research Society |
7
Conference Proceedings
Ir Thin Films for PZT Capacitors Prepared by MOCVD Using a New Ir Precursor
Materials Research Society |
Electrochemical Society |
8
Conference Proceedings
Superior properties of a novel iridium precursor for MOCVD are presented in terms of nucleation density, surface morphology, and incubation time.
Electrochemical Society |
Electrochemical Society |
Electrochemical Society |
Materials Research Society |
10
Conference Proceedings
Preparation of SrRuO3 and CaRuO3 films bu MOCVD and its application to electrodes for ferroelectric thin films
MRS-Materials Research Society |
Materials Research Society |
11
Conference Proceedings
Development of a high-energy-resolution x-ray microcalorimeter using Ti/Au TES
SPIE - The International Society for Optical Engineering |
Materials Research Society |
Electrochemical Society |