BE-SOI WITH ETCH STOP LAYERS GROWN BY RTCVD

BE-SOI WITH ETCH STOP LAYERS GROWN BY RTCVD

Author(s):

D. Feijóo

Publication title:

Proceedings of the Second International Symposium on Semiconductor Wafer Bonding--Science, Technology, and Applications

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

1993-29

Pub. Year:

1993

Page(from):

267

Page(to):

279

Pages:

13

Pub. info.:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566770682 [1566770688]

Language:

English

Call no.:

E23400/940556

Type:

Conference Proceedings

Details

TDL ID:	ZA00051847
Series ID:	PA00000028
Conf. info. (Name):	Second International Symposium on Semiconductor Wafer Bonding: Science, Technology, and Applications ; Hawaii Meeting of the Elactrochemical Society
Conf. info. (Number):	2nd ; 1993
Conf. info. (Venue):	HI
Conf. info. (Date):	1993.05.16-1993.05.21

Similar Items:

1 Conference Proceedings STRAIN-FREE GexSi1-x LAYERS WITH LOW THREADING DISLOCATION DENSITIES GROWN ON Si SUBSTRATES Fitzgerald, E.A., Xie, Y.H., Green, M.L., Brasen, D., Kortan, A.R., Mii, Y.J., Michel, J., Weir, B.E., Feldman, L.C., … Materials Research Society	7 Conference Proceedings Polish Stop Formation for Sub-Micron SOI Gay, D.L., Tweedie, M., Armstrong, B.M., Gamble, H.S. Electrochemical Society
2 Conference Proceedings BORON DIFFUSION IN Si1-XGeX STRAINED LAYERS Moriya, N., King, C.A., Feldman,L.., Luftman, H.S., Green, M.L., Bevk, J., Weir, B.E. Materials Research Society	8 Conference Proceedings CHARACTERISTICS OF DOPING AND DIFFUSION OF HEAVILY DOPED N AND P TYPE InP AND InGaAs EPITAXIAL LAYERS GROWN BY METAL ORGANIC CHEMICAL VAPOR DEPOSITION Pinzone, C.J., Ha, N.T., Gerrard, N.D., Dupuis, R.D., Luftman, H.S. Materials Research Society
3 Conference Proceedings Rapid Technique for Determination of Si/SiO2 and Si/Si-O-N Interface State Densities Based on Measurement of Recombination Lifetimes Green, M.L., Sachse, J.-U., Higashi, G., Feldman, L.C., Boone, T., Brasen, D. Electrochemical Society	9 Conference Proceedings Besoi using a Silicon Germanium Etch Stop Li, X., Gay, D.L., McNeill, D.W., Armstrong, B.M., Gamble, H.S. Electrochemical Society
4 Conference Proceedings HIGH QUALITY Si AND Si1-XGeX FILMS AND HETEROJUNCTION BIPOL;AR TRANSISTORS GROWN BY RAPID THERMAL CHEMICAL VAPOR DEPOSITION (RTCVD) Green, M. L., Brasen, D., Temkin, H., Kannan, V. C., Luftman, H. S. Materials Research Society	10 Conference Proceedings MOLECULAR BEAM EPITAXIAL GROWTH OF VERY HIGH MOLECULAR BEAN EPITAXIAL GROWTH OF VERY HIGH Si/GeSi HETEROSTRUCTURES Xie, Y.H., Fitzgerald, E.A., Mii, Y,J,, Monroe, D., Thiel, F.A., Weir, B.E., Feldman, L.C. Materials Research Society
5 Conference Proceedings Electroless copper deposition on tungsten for silicon integrated circuits Mak, C.Y., Feldman, L.C., Wong, Y-H., Weir, B.E., Blanco, J., Angyal, M., Scacham-Diamond, Y. Electrochemical Society	11 Conference Proceedings A Novel Approach for Dual Damascene Trench Etch for 90 nm Low-k Inter- Connect with No Middle Etch Stop Layer Chen, T.Q., Cong, H., Liu, W.P., Siew, Y.K., Pradeep, Y., Hsia, L.C., Jaiswal, R., Jain, A., Sim, I. Electrochemical Society
6 Conference Proceedings SOI Production using Polish Stops Formed by Trench before Bond Techniques Gay, D.L., Baine, P.T., Armstrong, B.M., Gamble, H.S. Electrochemical Society	12 Conference Proceedings Deposition and Characterization of Strained SiGe Layer as an Etch Stop in Ultrathin SOI Integration S.L. Suder, S. Bhattacharyya, R. Hurley, P. Baine, D. McNeill Electrochemical Society

1

2

3

4

5

6

7

8

9

10

11

12