A Charge to Breakdown study of High Temperature Annealing of RIE-Exposed Thin Oxides

A Charge to Breakdown study of High Temperature Annealing of RIE-Exposed Thin Oxides

Author(s):

T. Gu

Publication title:

Proceedings of the Symposia on Interconnects, Contact Metallization, and Multilevel Metallization and Reliability for Semiconductor Devices, Interconnects, amd Thin Insulator Materials

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

1993-25

Pub. Year:

1993

Page(from):

429

Page(to):

435

Pages:

7

Pub. info.:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566770675 [156677067X]

Language:

English

Call no.:

E23400/940140

Type:

Conference Proceedings

Details

TDL ID:	ZA00051843
Series ID:	PA00000028
Conf. info. (Name):	Third International Symposium on Interconnects, Contact Metallization and Multilevel Metallization ; 183rd Meeting of the Elecrochemical Society
Conf. info. (Number):	3rd ; 183rd
Conf. info. (Venue):	Honolulu, HI
Conf. info. (Date):	1993.05.19-1993.05.21

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