Study of the Mobility at High Electric Field in Si MOSFETs Between 4.2K and 300K

Study of the Mobility at High Electric Field in Si MOSFETs Between 4.2K and 300K

Author(s):

Publication title:

Proceedings of the Symposium on Low Temperature Electronics and High Temperature Superconductivity

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

1993-22

Pub. Year:

1993

Page(from):

52

Page(to):

62

Pages:

11

Pub. info.:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566770712 [1566770718]

Language:

English

Call no.:

E23400/932474

Type:

Conference Proceedings

Details

TDL ID:	ZA00051840
Series ID:	PA00000028
Conf. info. (Name):	The Second Symposium on Low Temperature Electronics and High Temperature Superconductivity ; 183rd Meetings of the Elactrochemical Society
Conf. info. (Number):	2nd ; 183rd
Conf. info. (Venue):	Honolulu, HI
Conf. info. (Date):	1993.05.16-1993.05.21

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