Mobility Law for Si MOSFET Modeling from Liquid Helium to Room Temperatures

Mobility Law for Si MOSFET Modeling from Liquid Helium to Room Temperatures

Author(s):

Publication title:

Proceedings of the Symposium on Low Temperature Electronics and High Temperature Superconductivity

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

1993-22

Pub. Year:

1993

Page(from):

40

Page(to):

51

Pages:

12

Pub. info.:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566770712 [1566770718]

Language:

English

Call no.:

E23400/932474

Type:

Conference Proceedings

Details

TDL ID:	ZA00051840
Series ID:	PA00000028
Conf. info. (Name):	The Second Symposium on Low Temperature Electronics and High Temperature Superconductivity ; 183rd Meetings of the Elactrochemical Society
Conf. info. (Number):	2nd ; 183rd
Conf. info. (Venue):	Honolulu, HI
Conf. info. (Date):	1993.05.16-1993.05.21

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