Reliability of Oxide Thin Film Transistors Under the Gate Bias Stress with 400 nm Wavelength Light Illumination

Reliability of Oxide Thin Film Transistors Under the Gate Bias Stress with 400 nm Wavelength Light Illumination

Author(s):

Soo-Yeon Lee

Publication title:

Amorphous and polycrystalline thin-film silicon science and technology--2011 : symposium held April 25-29, 2011, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

1321

Pub. Year:

2012

Page(from):

253

Page(to):

258

Pages:

6

Pub. info.:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781605112985 [1605112984]

Language:

English

Call no.:

M23500/1321

Type:

Conference Proceedings

Details

TDL ID:	ZA00050363
Series ID:	PA00000011
Conf. info. (Name):	MRS Spring Meeting
Conf. info. (Number):	2011
Conf. info. (Venue):	San Francisco, California, USA
Conf. info. (Date):	2011.04.25-2011.04.29

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