Blank Cover Image

In Situ Study of Strain Relaxation Mechanisms During Lattice-Mismatched InGaAs/GaAs Growth by X-Ray Reciprocal Space Mapping

Author(s):
Takuo Sasaki
Hidetoshi Suzuki
Akihisa Sai
Masamitu Takahasi
Seiji Fujikawa
Yoshio Ohshita
Masafumi Yamaguchi
2 more
Publication title:
Defects in inorganic photovoltaic materials : spring 2010, April 5-9, San Francisco, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
1268
Pub. Year:
2010
Page(from):
45
Page(to):
50
Pages:
6
Pub. info.:
Warrendale, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781605112459 [1605112453]
Language:
English
Call no.:
M23500/1268
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings Effects of in Content on Anisotropies in Strain Relaxation Processes of InGaAs/GaAs (001) Measured by Real-Time Three-Dimensional Reciprocal Space Mapping

H. Suzuki, T. Sasaki, M. Takahasi, Y. Ohshita, M. Yamaguchi

Trans Tech Publications
7 Conference Proceedings X-RAY INVESTIGATION OF STRAIN RELAXATION IN SHORT-PERIOD SimGen SUPERLATTICES USING RECIPROCAL SPACE MAPPING

Hamberger, P., Koppensteiner, E., Bauer, G., Kibbel, H., Presting, H., Kasper, E., Pesek, A.

Materials Research Society
2 Conference Proceedings Distribution of Misfit Dislocations at the InGaAs/GaAs(001) Interface Observed by Monochromatic X-Ray Topography

H. Suzuki, T. Sasaki, S. Yamamoto, Y. Ohshita, A. Fukuyama

Trans Tech Publications
8 Conference Proceedings X-Ray Diffraction Study of Lattice Strain Relaxation in Mismatched III-V Heteroepitaxial Layers

Franzosi,P., Francesio,L., Gennari,S.

Trans Tech Publications
3 Conference Proceedings *STRAIN RELAXATION MECHANISMS IN LATTICE MISMATCHED EPITAXY

Hull, R., Bean, J. C., Bonar, J. M., Paticolas, L.

Materials Research Society
9 Conference Proceedings DEFECT REDUCTION IN MOCVD GROWN Si/GaAs

Al-Jassim, N.M., Nishioka, Takashi, Itoh, Yoshio, Yamamoto, Akio, Yamaguchi, Masafumi

Materials Research Society
4 Conference Proceedings ELECTRICAL AND OPTICAL PROPERTIES OF GaAs HETEROEPITAXIAL FILMS ON Si SUBSTRATES

Nishioka, Takashi, Itoh, Yoshio, Yamaguchi, Masafumi

Materials Research Society
10 Conference Proceedings REDUCTION OF DEFECTS IN HIGHLY LATTICE MISMATCHED InGaAs GROWN ON GaAs BY MOCVD

Lee, Bun, Yoon, Meeyoung, Baek, Jong-Hyeob, Lee, El-Hang, Lee, Jeong Yong

MRS - Materials Research Society
5 Conference Proceedings Post Annealing Studies Of C60 Ion Implanted Thin Films

Dharmarasu, Nethaji, Narayanan, Kannan L., Kojima, Nabuaki, Ohshita, Yoshio, Yamaguchi, Masafumi

Materials Research Society
11 Conference Proceedings X-ray optics of in-situ synchrotron topography studies of the early stages of relaxation in epitaxial InGaAs on GaAs

Tanner, B.K., Keir, A.M., Mock, P., Whitehouse, C.R., Lacey, G., Johnson, A.D., Smith, G.W., Clark, G.F.

SPIE
6 Conference Proceedings Reciprocal lattice mapping of InGaAs Layers grown on InP(001)and GaAs(001)substrates

Bak-Misiuk,J., Kaniewski,J., Domagata,J., Reginski,K., Adamczewska,J., Trela,J.

SPIE - The International Society for Optical Engineering
12 Conference Proceedings *HETEROEPITAXY OF GaAs, GaP AND InP ON Si BY OMVPE AND THEIR APPLICATION TO THIN FILM SOLAR CELLS

Yamamoto, Akio, Yamaguchi, Masafumi

Materials Research Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12