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Origins for Electron Mobility Improvement in InGaAs MISFETs with (NH₄)₂₅ Treatment

Author(s):
Y. Urabe
N. Miyata
T. Yasuda
H. Ishii
T. Itatani
H. Yamada
N. Fukuhara
M. Hata
M. Yokoyama
M. Takenaka
S. Takagi
6 more
Publication title:
Materials and devices for end-of-roadmap and beyond CMOS scaling : symposium held April 5-9, 2010, San Francisco, California
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
1252
Pub. date:
2010
Vol.:
1252
Page(from):
105
Page(to):
112
Pages:
8
Pub. info.:
Warrendale, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781605112299 [1605112291]
Language:
English
Call no.:
M23500/1252
Type:
Conference Proceedings

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