Nanocrystal Memory Device Utilizing GaN Quantum Dots by RF-MBE
- Author(s):
- Publication title:
- Materials and physics for nonvolatile memories II : spring 2010, April 5-9, San Francisco, California, U.S.A.
- Title of ser.:
- Materials Research Society symposium proceedings
- Ser. no.:
- 1250
- Pub. Year:
- 2010
- Page(from):
- 63
- Page(to):
- 68
- Pages:
- 6
- Pub. info.:
- Warrendale, Pa.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781605112275 [1605112275]
- Language:
- English
- Call no.:
- M23500/1250
- Type:
- Conference Proceedings
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