Ultra-Low Energy Ion Implantation of Si into HfO₂ and HfSiO-Based Structures for Non Volatile Memory Applications | 東京工業大学附属図書館文献データベース

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Ultra-Low Energy Ion Implantation of Si into HfO₂ and HfSiO-Based Structures for Non Volatile Memory Applications

Author(s):

S. Schamm-Chardon

Publication title:

Materials and physics for nonvolatile memories II : spring 2010, April 5-9, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

1250

Pub. Year:

2010

Page(from):

41

Page(to):

46

Pages:

6

Pub. info.:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781605112275 [1605112275]

Language:

English

Call no.:

M23500/1250

Type:

Conference Proceedings

Details

TDL ID:	ZA00050336
Series ID:	PA00000011
Conf. info. (Name):	MRS Spring Meeting : Symposium G
Conf. info. (Number):	2010
Conf. info. (Venue):	San Francisco, California, USA
Conf. info. (Date):	2010.04.05-2010.04.09

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