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Passivation by N Implantation of the SiO₂/SiC Acceptor Interface States: Impact on the Oxide Hole Traps and the Gate Oxide Reliability

Author(s):
Publication title:
Silicon Carbide 2010--materials, processing and devices : symposium held April 5-9, 2010, San Francisco, California
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
1246
Pub. date:
2010
Vol.:
1246
Page(from):
201
Page(to):
206
Pages:
6
Pub. info.:
Warrendale, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781605112237 [1605112232]
Language:
English
Call no.:
M23500/1246
Type:
Conference Proceedings

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