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Diffusivity of Si in the 3C-SiC Buffer Layer on Si(100) by X-Ray Photoelectron Spectroscopy

Author(s):
Publication title:
Silicon Carbide 2010--materials, processing and devices : symposium held April 5-9, 2010, San Francisco, California
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
1246
Pub. Year:
2010
Page(from):
147
Page(to):
154
Pages:
8
Pub. info.:
Warrendale, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781605112237 [1605112232]
Language:
English
Call no.:
M23500/1246
Type:
Conference Proceedings

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