Recent Developments in SiC Homoepitaxy Using Dichlorosilane for High Power Devices

Recent Developments in SiC Homoepitaxy Using Dichlorosilane for High Power Devices

Author(s):

Publication title:

Silicon Carbide 2010--materials, processing and devices : symposium held April 5-9, 2010, San Francisco, California

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

1246

Pub. Year:

2010

Page(from):

77

Page(to):

90

Pages:

14

Pub. info.:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781605112237 [1605112232]

Language:

English

Call no.:

M23500/1246

Type:

Conference Proceedings

Details

TDL ID:	ZA00050335
Series ID:	PA00000011
Conf. info. (Name):	MRS Spring Meeting : Symposium B
Conf. info. (Number):	2010
Conf. info. (Venue):	San Francisco, California, USA
Conf. info. (Date):	2010.04.05-2010.04.09

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