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Normally-Off GaN MOSFETs on Silicon Substrates with High-Temperature Operation

Author(s):
Hiroshi Kambayashi
Yuki Niiyama
Takehiko Nomura
Masayuki Iwami
yoshihiro Satoh
Sadahiro Kato
1 more
Publication title:
III-nitride materials for sensing, energy conversion and controlled light-matter interactions : symposium held November 29-December 3, 2009, Boston, Massachusetts, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
1202
Pub. date:
2010
Vol.:
1202
Page(from):
113
Page(to):
118
Pages:
6
Pub. info.:
Warrendale, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781605111759 [1605111759]
Language:
English
Call no.:
M23500/1202
Type:
Conference Proceedings

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