First-Principles study of HfO₂/GaAs interface
- Author(s):
Kyeongjae Cho Weichao Wang Ka Xiong Geunsik Lee Min Huang Robery M. Wallace - Publication title:
- CMOS gate-stack scaling--materials, interfaces and reliability implications : symposium held April 14-16, 2009, San Francisco, California, U.S.A.
- Title of ser.:
- Materials Research Society symposium proceedings
- Ser. no.:
- 1155
- Pub. Year:
- 2009
- Page(from):
- 143
- Page(to):
- 150
- Pages:
- 8
- Pub. info.:
- Warrendale, Pa.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781605111285 [1605111287]
- Language:
- English
- Call no.:
- M23500/1155
- Type:
- Conference Proceedings
Similar Items:
Materials Research Society |
7
Conference Proceedings
Preliminary First Principles Study of Hf and Zr Aluminates as Replacement High-k Dielectrics
Materials Research Society |
2
Conference Proceedings
First Principles Study of Metal/Bi₂Te₃ Interfaces: Implications to Improve Contact Resistance
Materials Research Society |
Materials Research Society |
Materials Research Society |
9
Conference Proceedings
First-Principles Study of Electronic and Dielectric Properties of ZrO2 and HfO2
Materials Research Society |
Materials Research Society |
10
Conference Proceedings
First-Principles Study of Electronic and Dielectric Properties of ZrO2 and HfO2
Materials Research Society |
Materials Research Society |
Trans Tech Publications |
6
Conference Proceedings
Experimental and First-Principles Studies of the Band Alignment at the HfO2/4H-SiC (0001) Interface
Trans Tech Publications |
Materials Research Society |