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MOCVD Growth of High Hole Concentration (>2x10¹⁹ cm⁻³) P-Type InGaN for Solar Cell Application

Author(s):
Andrew Melton
Hongbo Yu
Omkar Jani
Balakrishnam R. Jampana
Shen-Jie Wang
Shalini Gupta
John Buchanan
William E. Fenwick
Ian T. Ferguson
4 more
Publication title:
Photovoltaic materials and manufacturing issues : symposium held December 2-4, 2008, Boston, Massachusetts, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
1123
Pub. date:
2009
Vol.:
1123
Page(from):
89
Page(to):
94
Pages:
6
Pub. info.:
Warrendale, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781605110950 [1605110957]
Language:
English
Call no.:
M23500/1123
Type:
Conference Proceedings

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