MOCVD Growth of High Hole Concentration (>2x10¹⁹ cm⁻³) P-Type InGaN for Solar Cell Application | 東京工業大学附属図書館文献データベース

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MOCVD Growth of High Hole Concentration (>2x10¹⁹ cm⁻³) P-Type InGaN for Solar Cell Application

Author(s):

Balakrishnam R. Jampana

William E. Fenwick

Ian T. Ferguson

Publication title:

Photovoltaic materials and manufacturing issues : symposium held December 2-4, 2008, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

1123

Pub. Year:

2009

Page(from):

89

Page(to):

94

Pages:

6

Pub. info.:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781605110950 [1605110957]

Language:

English

Call no.:

M23500/1123

Type:

Conference Proceedings

Details

TDL ID:	ZA00049455
Series ID:	PA00000011
Conf. info. (Name):	MRS Fall Meeting
Conf. info. (Number):	2008
Conf. info. (Venue):	Boston, Massachusetts, USA
Conf. info. (Date):	2008.12.02-2008.12.04

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