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Post-stress/breakdown leakage mechanism in ultrathin high-κ (HfO₂)x(SiO₂)₁₋x/SiO₂ gate stacks: A nanoscale conductive-Atomic Force Microscopy C-AFM

Author(s):
Hasan Javed Uppal
Vladimir Markevich
Stergios N. Volkos
Athanasios Dimoulas
Bruce Hamilton
Anthony R. Peaker
1 more
Publication title:
Performance and reliability of semiconductor devices : symposium held November 30-December 3, 2008, Boston, Massachusetts, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
1108
Pub. Year:
2009
Page(from):
195
Page(to):
200
Pages:
6
Pub. info.:
Warrendale, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781605110806 [1605110809]
Language:
English
Call no.:
M23500/1108
Type:
Conference Proceedings

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