Influence of Titanium Nitride Cap Layer Thickness on the Oxygen Sensitivity of Cobalt Films During Silicide Processing

Influence of Titanium Nitride Cap Layer Thickness on the Oxygen Sensitivity of Cobalt Films During Silicide Processing

Author(s):

Nathan J. Hoffman

Publication title:

Performance and reliability of semiconductor devices : symposium held November 30-December 3, 2008, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

1108

Pub. Year:

2009

Page(from):

117

Page(to):

120

Pages:

4

Pub. info.:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781605110806 [1605110809]

Language:

English

Call no.:

M23500/1108

Type:

Conference Proceedings

Details

TDL ID:	ZA00049377
Series ID:	PA00000011
Conf. info. (Name):	Materials Research Society meeting ; Symposium on performance and reliability of semiconductor devices
Conf. info. (Number):	2008
Conf. info. (Venue):	Boston, Massachusetts, USA
Conf. info. (Date):	2008.11.30-2008.12.03

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