Correlation Among Material Quality, Performance and Reliability of High Power and High Frequency AlGaN/GaN HFET

Correlation Among Material Quality, Performance and Reliability of High Power and High Frequency AlGaN/GaN HFET

Author(s):: Yasushi Nanishi
Publication title:: Performance and reliability of semiconductor devices : symposium held November 30-December 3, 2008, Boston, Massachusetts, U.S.A.
Title of ser.:: Materials Research Society symposium proceedings
Ser. no.:: 1108
Pub. Year:: 2009
Page(from):: 19
Page(to):: 28
Pages:: 10
Pub. info.:: Warrendale, Pa.: Materials Research Society
ISSN:: 02729172
ISBN:: 9781605110806 [1605110809]
Language:: English
Call no.:: M23500/1108
Type:: Conference Proceedings

Details

TDL ID:	ZA00049377
Series ID:	PA00000011
Conf. info. (Name):	Materials Research Society meeting ; Symposium on performance and reliability of semiconductor devices
Conf. info. (Number):	2008
Conf. info. (Venue):	Boston, Massachusetts, USA
Conf. info. (Date):	2008.11.30-2008.12.03

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