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Enhancement Mode GaN MOSFETs on Silicon Substrates with High Field-effect Mobility

Author(s):
Hiroshi Kambayashi
Yuki Niiyama
Shinya Ootomo
Takehiko Nomura
Masayuki Iwami
Yoshihiro Satoh
Sadahiro Kato
Seikoh Yoshida
3 more
Publication title:
Advances in GaN, GaAs, SiC and related alloys on silicon substrates : symposium held March 24-28, 2008, San Francisco, U.S.A
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
1068
Pub. date:
2008
Vol.:
1068
Page(from):
27
Page(to):
32
Pages:
6
Pub. info.:
Warrendale, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781605110387 [1605110388]
Language:
English
Call no.:
M23500/1068
Type:
Conference Proceedings

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