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Impact of Phonon-Limited Mobility Superiority in Double-Gate or Fin FET with a (111) Si and (001) Ge Surface Channel on Device Scaling

Author(s):
Publication title:
Silicon-on-insulator technology and devices 13
Title of ser.:
ECS transactions
Ser. no.:
6(4)
Pub. date:
2007
Page(from):
369
Page(to):
374
Pages:
6
Pub. info.:
Pennington, N.J.: Electrochemical Society
ISSN:
19385862
ISBN:
9781566775533 [1566775531]
Language:
English
Call no.:
E23400/6-4
Type:
Conference Proceedings

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