Atomic-Scale Simulations of Electron Mobilities in Ultrathin SOI MOSFETs
- Author(s):
S. T. Pantelides G. Hadjisavvas M. Evans L. Tsetseris M. Caussanel R. Schrimpf - Publication title:
- Silicon-on-insulator technology and devices 13
- Title of ser.:
- ECS transactions
- Ser. no.:
- 6(4)
- Pub. Year:
- 2007
- Page(from):
- 353
- Page(to):
- 362
- Pages:
- 10
- Pub. info.:
- Pennington, N.J.: Electrochemical Society
- ISSN:
- 19385862
- ISBN:
- 9781566775533 [1566775531]
- Language:
- English
- Call no.:
- E23400/6-4
- Type:
- Conference Proceedings
Similar Items:
1
Conference Proceedings
First-principles Calculation of Electron Mobilities in Ultrathin SOI MOSFETs
Materials Research Society |
Electrochemical Society |
Trans Tech Publications |
American Institute of Chemical Engineers |
Materials Research Society |
Electrochemical Society |
Springer |
Electrochemical Society |
5
Conference Proceedings
Hydrogen Model for Negative Bias Temperature Instabilities in MOS Gate Dielectrics
Electrochemical Society |
MRS - Materials Research Society |
Trans Tech Publications |
Electrochemical Society |