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Analysis of PD AOI pMOSFET Device Performance Enhancement due to Direct-Tunneling Current in the Partial n+ Poly Gate

Author(s):
G. Guegan
J. Pretet
R. Gwoziecki
O. Gonnard
G. Gouget
P. Touret
C. Raynaud
S. Deleonibus
3 more
Publication title:
Silicon-on-insulator technology and devices 13
Title of ser.:
ECS transactions
Ser. no.:
6(4)
Pub. date:
2007
Page(from):
165
Page(to):
172
Pages:
8
Pub. info.:
Pennington, N.J.: Electrochemical Society
ISSN:
19385862
ISBN:
9781566775533 [1566775531]
Language:
English
Call no.:
E23400/6-4
Type:
Conference Proceedings

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