Analysis of PD AOI pMOSFET Device Performance Enhancement due to Direct-Tunneling Current in the Partial n+ Poly Gate

Analysis of PD AOI pMOSFET Device Performance Enhancement due to Direct-Tunneling Current in the Partial n+ Poly Gate

Author(s):

G. Guegan

Publication title:

Silicon-on-insulator technology and devices 13

Title of ser.:

ECS transactions

Ser. no.:

6(4)

Pub. Year:

2007

Page(from):

165

Page(to):

172

Pages:

8

Pub. info.:

Pennington, N.J.: Electrochemical Society

ISSN:

19385862

ISBN:

9781566775533 [1566775531]

Language:

English

Call no.:

E23400/6-4

Type:

Conference Proceedings

Details

TDL ID:	ZA00047128
Series ID:	PA00000034
Conf. info. (Name):	International Symposium on Silicon-on-Insulator Technology and Devices ; Meeting of the Electrochemical Society
Conf. info. (Number):	13th ; 211th
Conf. info. (Venue):	Chicago, Illinois, USA
Conf. info. (Date):	2007.05.06-2007.05.11

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