Intrinsic Advantages of SOI Multiple-Gate MOSFET (MuGFET) for Low Power Applications | 東京工業大学附属図書館文献データベース

Blank Cover Image

Intrinsic Advantages of SOI Multiple-Gate MOSFET (MuGFET) for Low Power Applications

Author(s):

Publication title:

Silicon-on-insulator technology and devices 13

Title of ser.:

ECS transactions

Ser. no.:

6(4)

Pub. date:

2007

Page(from):

59

Page(to):

70

Pages:

12

Pub. info.:

Pennington, N.J.: Electrochemical Society

ISSN:

19385862

ISBN:

9781566775533 [1566775531]

Language:

English

Call no.:

E23400/6-4

Type:

Conference Proceedings

Details

TDL ID:	ZA00047128
Series ID:	PA00000034
Conf. info. (Name):	International Symposium on Silicon-on-Insulator Technology and Devices ; Meeting of the Electrochemical Society
Conf. info. (Number):	13th ; 211th
Conf. info. (Venue):	Chicago, Illinois, USA
Conf. info. (Date):	2007.05.06-2007.05.11

Similar Items:

1 Conference Proceedings Effects of Hydrogen Annealing Process Conditions on Nano Scale Silicon (011) Fins Zaman, Rownak J., Xiong, Weize, Quintanilla, Rudy, Schulz, Thomas, Cleavelin, C. Rinn, Wise, Rick, Pas, Mike, Patruno, … Materials Research Society	7 Conference Proceedings Measurement of generation lifetime in partially depleted SOI MOSFETs Shin, H C, Racanelli, M, Huang, W M, Ford, J, Foersiner, J, Shin, H, Wetteroth, T, Hong, S Q, Wilson, S R, Schroder, D … Electrochemical Society
2 Conference Proceedings Ge pile-up and defect formation during dry oxidation of SiGe Daval, N., Guiot, E., Bourdelle, K. K., Kennard, M., Cayrefourcq, I., Akatsu, T., Mazure, C., Cerva, H., Rucki, A. Electrochemical Society	8 Conference Proceedings Applications of Bonding SOI Technology to High Performance LSI Circuits Yoshimi, M., Letertre, F., Cayrefourcq, I., Mazure, C.(Invited) Electrochemical Society
3 Conference Proceedings STRAINED-SOI (SSOI) AND MOBILITY ENHANCEMENT TECHNOLOGIES FOR HIGH PERFORMANCE MOSFETS IN 45NM-NODE AND BELOW YOSHIM, MAKOTO, CAYREFOURCQ, IAN, MAZURE, CARLOS Electrochemical Society	9 Conference Proceedings Replacing the BOX with buried alumina: improved thermal dissipation in SOI MOSFETs Oshima, K., Cristoloveanu, S., Guillaumot, B., Carval, G.be, Lwai, H., Mazure, C., Kang, M.S., Rae, Y.H., Kwon, J.W., … Electrochemical Society
4 Conference Proceedings Mobility enhancement through substrate engineering Invited Cayrefourcq, I., Kennard, M., Metral, F., Mazure, C., Thean, A., Sadaka, M., White, T., Nguyen, B.Y. Electrochemical Society	10 Conference Proceedings Determination of the Coulomb Scattering Parameter (Alpha) for ALD HfO2/TiN Gate n and p-MOSFETs Using Negative Bias Temperature Stress M. Adi Negara, K. Cherkaoui, P. Majhi, W. Tsai, D. Bauza Electrochemical Society
5 Conference Proceedings Dual gate SOI MOSFET: physics and potential Colinge, J P Electrochemical Society	11 Conference Proceedings Thin film transfer by Smart Cut technology beyond SOI Mazure, C. Electrochemical Society
6 Conference Proceedings Evolution of SOI MOSFETs: From Single Gate to Multiple Gates Colinge, Jean-Pierre Materials Research Society	12 Conference Proceedings Investigation of charge control related performances In double-gate SOI MOSFETs Kiichytska, V., Chung, T.M., van Meer, H., de Meyer, K., Raskin, J.P., Flandre, D. Electrochemical Society

1

2

3

4

5

6

7

8

9

10

11

12