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The Physical Origins of Fast and Slow Components in NBTI Degradation for p-MOS Transistors with SiON Gate Dielectric

Author(s):
Publication title:
Silicon nitride, silicon dioxide, and emerging dielectrics 9
Title of ser.:
ECS transactions
Ser. no.:
6(3)
Pub. date:
2007
Page(from):
167
Page(to):
184
Pages:
18
Pub. info.:
Pennington, N.J.: Electrochemical Society
ISSN:
19385862
ISBN:
9781566775526 [1566775523]
Language:
English
Call no.:
E23400/6-3
Type:
Conference Proceedings

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