The Physical Origins of Fast and Slow Components in NBTI Degradation for p-MOS Transistors with SiON Gate Dielectric

The Physical Origins of Fast and Slow Components in NBTI Degradation for p-MOS Transistors with SiON Gate Dielectric

Author(s):

Publication title:

Silicon nitride, silicon dioxide, and emerging dielectrics 9

Title of ser.:

ECS transactions

Ser. no.:

6(3)

Pub. Year:

2007

Page(from):

167

Page(to):

184

Pages:

18

Pub. info.:

Pennington, N.J.: Electrochemical Society

ISSN:

19385862

ISBN:

9781566775526 [1566775523]

Language:

English

Call no.:

E23400/6-3

Type:

Conference Proceedings

Details

TDL ID:	ZA00047127
Series ID:	PA00000034
Conf. info. (Name):	Symposium on Silicon Nitride, Silicon Dioxide Thin Insulating Films, and Emerging Dielectrics ; Meeting of The Electrochemical Society
Conf. info. (Number):	9th ; 211th
Conf. info. (Venue):	Chicago, IL, USA
Conf. info. (Date):	2007.05.06-2007.05.11

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