Low Temperature GaN Epitaxy Using Ga(mDTC)3 Precursor

Low Temperature GaN Epitaxy Using Ga(mDTC)3 Precursor

Author(s):

C. Park

Publication title:

State-of-the-art program on compound semiconductors 46 (SOTAPOCS 46) and processes at the semiconductor/solution interface 2

Title of ser.:

ECS transactions

Ser. no.:

6(2)

Pub. Year:

2007

Page(from):

235

Page(to):

238

Pages:

4

Pub. info.:

Pennington, N.J.: Electrochemical Society

ISSN:

19385862

ISBN:

9781566775519 [1566775515]

Language:

English

Call no.:

E23400/6-2

Type:

Conference Proceedings

Details

TDL ID:	ZA00047126
Series ID:	PA00000034
Conf. info. (Name):	State-of-the-Art Program on Compound Semiconductors - SOTAPOCS ; International Symposium on Processes at the Semiconductor-Solution Interface ; Meeting of the Electrochemical Society
Conf. info. (Number):	46th ; 2nd ; 211th
Conf. info. (Venue):	Chicago, IL, USA
Conf. info. (Date):	2007.05.06-2007.05.10

Similar Items:

1 Conference Proceedings Growth of GaN nano-structures using Ga(mDTC)₃ precursor Chinho Park, Jin-ho Kim, Deoksun Yoon, Woo-Sik Jung, Tae Jin Lee Elsevier	7 Conference Proceedings Effects of NH3/N2 Plasma Treatment on Very-Low-Temperature (100℃) Oxides Kim, C.-H., Jung, S-H., Nam, W.-J., Han, M.-K. Electrochemical Society
2 Conference Proceedings Scanning Rapid Thermal Annealing Process for Low Temperature Poly-Silicon Thin Film Transistors Kim, F.-K., Kim, G.-B., Yoon, Y-G., Kim, C.-H., Lee, B.-I., Joo, S.-K. Electrochemical Society	8 Conference Proceedings Low Temperature Epitaxy of 3C SiC Using Hexamethyldisilane Precursor on Si <111> Substrates B. Wagner, J.D. Oliver, N.B. Singh, M. King, S. McLaughlin Trans Tech Publications
3 Conference Proceedings Low resistance and high reflectivity Al based reflectors for p-GaN flip process S. W. Chae, K. Y. Ko, D. W. Kim, S. M. Hwang, H. J. Park, J. W. Kim, Y. C. Kim SPIE - The International Society of Optical Engineering	9 Conference Proceedings Enhanced Two Dimensional Growth of Low Temperature GaN Buffer Layers by N2 Plasma Pretreatment of Sapphire Substrates Kim, M.H., Sone, C., Yi, T.H., Yoon, E. Electrochemical Society
4 Conference Proceedings Low Temperature Poly-Si TFT Technology Noguchi, T., Kim, D.Y., Kwon, J.Y., Park, K.B., Jung, J.S., Xianyu, W.X., Yin, H.X., Cho, H.S. Materials Research Society	10 Conference Proceedings Low-Temperature Growth and Structural Characterization of GaAs Using Ionized Source Beam Epitaxy Roh, D. -W., Kim, K. MRS - Materials Research Society
5 Conference Proceedings Novel STI CMP Process Using Highly Selective Ceria Slurry with Thin Nitride Stopper Kim, Jung-Yup, Park, Jung Hun, Yoon, Bo Un, Hah, Sangrok, Moon, Joo-Tae Electrochemical Society	11 Conference Proceedings *High-quality AlGaN/GaN grown on sapphire by gas-source molecular beam epitaxy using a thin low-temperature AlN layer Jurkovic, M. J., Li, L. K., Turk, B., Wang, W. I., Syed, S., Simonian, D., Stormer, H. L. MRS-Materials Research Society
6 Conference Proceedings Quantum-structure dependent excitonic carrier dynamics of InxGal-xN/GaN multi-quantum-wells (Invited Paper) [6121-04] Hong, S., Kim, Y. S., Yoon, Y.J., Park, J.S., Kim, B. K., Fomin, A., Lee, G. H., Kim, J.W., Cho, H.K., Joo, T. SPIE - The International Society of Optical Engineering	12 Conference Proceedings ScAlMgO4: An Oxide Substrate for GaN Epitaxy Hellman, E. S., Brandle, C. D., Schneemeyer, L. F., Wiesmann, D., Brener, I., Siegrist, T., Berkstresser, G. W., … MRS - Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12